Effects of osmotic stress on germination and germination indices of synthetic wheat | Abstract
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Effects of osmotic stress on germination and germination indices of synthetic wheat

Author(s): Mohammad Ali Jahanbin, Mohsen Roshdi and Mohammad Zaefizadeh

In order to investigate the synthetic wheat genotype reactions to drought stress in germination stage and to determine the resistant genotypes to osmotic stress, an experiment consisting of 12 genotypes from synthetic wheat through factorial experiment in Complete Random Design (CRD) with three repetitions has been conducted. The first factor was considered as poly ethylene glycol density (PEG) with osmotic potentials of 0, -4/0, -8/0, and -2/1 mp and the second factor was 12 types of synthetic wheat. During conduction of the experiment germination indices including: germination rate (GR), germination index (GI), mean of emergence time (MET), final germination percentage (FGP), and germination rate index (GRI) were calculated. The analysis of variance for germination indices showed that there was a significant difference between different levels of osmotic potentials and genotypes for all the investigated characteristics. The mutual effects of variance in the amount have been observed significant between the genotype and the levels of poly ethylene glycol (drought) for germination index, final germination percentage, germination rate index, length of radicle, length of plumule. Based on Fernandez index (STI), according to their germination criteria, S2 genotype was the most resistant type and S9 was the most sensitive one. In normal and drought conditions positive correlations between the germination indices, except for germination rate and wet and drought weight of plants, have been observed which were significant for characteristics of mean germination index and germination rate index.