A Successive Ionic Layered Adsorption Reaction technique (SILAR) has been used to deposit CuS thin films on glass substrates at room temperature using cupric sulphate as cationic and sodium sulphide as anionic precursor .
In order to study size-dependent optical, structural and electrical properties, films of different thickness were prepared by varying SILAR deposition cycles from 30 to 110. The XRD studies showed that films are nanocrystalline in nature with hexagonal structure. Band gap energy and electrical activation energy of SILAR grown CuS decreases when film thickness increases. The thermo-emf measurements confirmed that the films prepared are semiconducting in nature with P-type conductivity