Electrical Transport Properties in Carbon Nano Tube (CNT) as a channel of CNTFET | Abstract
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Electrical Transport Properties in Carbon Nano Tube (CNT) as a channel of CNTFET

Author(s): A. Bahari , Z. Naimi and M. Amiri

When a transistor is shrunk, all of its parts must be shrunk. When gate oxide is very slim, the
current tunnelling to gate increases exponentially. The other problem in the current CMOS
(Complementary Metal Oxide Semiconductor) transistor is the length of channel respect the
Fermi wavelength. To make better and faster CPUs and logical device we need to use more
transistors in an small area which have been faced with many challenges issues and problems
due to tunnelling current and boron diffusion though the ultra thin silicon oxide film. Due to the
importance of high current operations of electronic devices, Single Walled (SW) CNT has been
considered as a one dimension (1D) structure and the strong covalent carbon-carbon bonding
configuration. We have thus studied the electrical transport properties in a CNT as a channel of
Carbon Nano Tube Field Effect Transistor (CNTFET) and simulated electron transport in a
CNTFET by solving Boltezman equation to obtain distribution function in the SWCNT channel,
including the development of high-κ gate dielectric integration, chemical functionalization for
conformal dielectric deposition and pushing the performance limit of nanotube FETs by channel
length scaling. The obtained simulations results show that in terms of ON state current density
SWCNT can be choice as a wire for electron transportation compatibility with high-κ gate
dielectrics. Our results show that system takes a stationary state after passing a time around 10-
13 s.