The present CdHgTe technology poses limitations on the efficiency of photovoltaic devices due to weakening of Hg-Te bonds by inclusion of Cd in CdHgTe. The major consequences are lattice mismatch, defects, low hardness and overall instability. Therefore, an equivalent, new material is being searched to resolve the issue. In view of this, we report, for the first time, a chemical route to grow a full range of ZnHgTe alloy system in thin film form. So far no literature is available on the synthesis of alloy system in thin film form using chemical bath method. The synthesis have been carried out using ammonia complexed mercury and zinc nitrates as a source of metal ions and sodium tellurosulphate, Na2TeSO3 (meta-stable), as a source of telluride ion at 323 K temperature. The films have been characterized by XRD, SEM, AAS, Optical absorption and Electrical measurement techniques. The XRD analysis of ‘as deposited’ thin films indicated cubic nature for all the films. The crystallinity, electrical conductivities were found to increase, while band gaps to decrease with addition of Hg progressively without any anomalies.