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Thermoelectric Properties of Indium Doped Lead Selenide Thin Films Deposited by Vacuum Evaporation Technique | Abstract
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Abstract

Thermoelectric Properties of Indium Doped Lead Selenide Thin Films Deposited by Vacuum Evaporation Technique

Author(s): K. S. Chaudhari, Y. R. Toda, D. N. Gujarathi

Pb0.8In0.2Se thin films were prepared on glass substrate by vacuum evaporation technique at a pressure of 10-5 torr. The thermoelectric properties of the films was determined over the thickness range of 1000 ?º, 1500 ?º, 2000 ?º, 2500 ?º and 3000 ?º. Thermoelectric properties shows a positive sign exhibiting P- type semiconductig nature of films. Fermi energy and scattering parameter were determined. The estimated values of Fermi energy and scattering parameter are 0.02 eV to 0.16 eV and 0.26 to 0.143 respectively. The XRD analysis confirms that the deposited films are nanocrystalline having grain size 4.428 to 48.00 nm.